inchange semiconductor isc product specification isc silicon npn power transistors bdt41/a/b/c description dc current gain -h fe = 30(min)@ i c = 0.3a collector-emitter sustaining voltage- : v ceo(sus) = 40v(min)- bdt41; 60v(min)- BDT41A 80v(min)- bdt41b; 100v(min)- bdt41c complement to type bdt42/42a/42b/42c applications designed for use in general purpose amplifer and switching applications absolute maximum ratings(t =25 a ) symbol parameter value unit bdt41 80 BDT41A 100 bdt41b 120 v cbo collector-base voltage bdt41c 140 v bdt41 40 BDT41A 60 bdt41b 80 v ceo collector-emitter voltage bdt41c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 6 a i cm collector current-peak 10 a i b b base current 3 a p c collector power dissipation t c =25 65 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.92 /w r th j-a thermal resistance,junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors bdt41/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt41 40 BDT41A 60 bdt 41b 80 v ceo(sus) collector-emitter sustaining voltage bdt 41c i c = 30ma; i b = 0 100 v v ce(sat) collector-emitter saturation voltage i c = 6a; i b = 0.6a b 1.5 v v be(on) base-emitter on voltage i c = 6a ; v ce = 4v 2.0 v i ces collector cutoff current v ce = v ceomax ; v be = 0 0.4 ma bdt41/a v ce = 30v; i b = 0 b i ceo collector cutoff current bdt41b/c v ce = 60v; i b = 0 b 0.2 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.5 ma h fe-1 dc current gain i c = 0.3a ; v ce = 4v 30 h fe-2 dc current gain i c = 3a ; v ce = 4v 15 75 f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v 3 mhz switching times t on turn-on time 0.6 s t off turn-off time i c = 6a; i b1 = -i b2 = 0.6a 1.0 s isc website www.iscsemi.cn
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